MSX 单面积方硅探测器
SILICON DETECTOR TYPE: SINGLE AREA
DESIGN: Totally depleted ion implanted structures. Micron Semiconductor’s ultra low leakage currents and thin entrance window couples with fast response from total depletion with over voltage capability permits a wide range of applications for these single area detectors. For example, High Energy Physics, Fission Fragments Detection, Room Temperature X-ray Detection, Gamma Transient Detection, Heavy Ion Physics and Nuclear Structure Physics.
DETECTOR DESIGN | MSX03 |
ACTIVE AREA (mm²) | 10.00 x 10.00 |
CHIP OUTER DIMENSIONS (mm²) | 13.00 x 13.00 |
JUNCTION WINDOW TYPE OPTIONS | 2 /7 /9 |
OHMIC WINDOW | 2M |
PACKAGE | Range of FR4 and ceramic designs |