产品详情
SILICON DETECTOR TYPE: POSITION SENSITIVE DETECTOR (PSD)
DESIGN: Silicon planar ion implanted structure p on n silicon totally depleted with resistive p junction layer featuring high uniformity and equipotential channel along the linear axis between the two anodes of this common cathode device on all microstrip channels.
DETECTOR DESIGN | X1 |
JUNCTION NUMBER OF ELEMENTS | 16 |
JUNCTION ELEMENT ACTIVE AREA (mm2) | 3.00 x 50.00 |
TOTAL ACTIVE AREA (mm2) | 50.00 x 50.00 |
CHIP DIMENSIONS (mm2) | 52.10 x 52.10 |
JUNCTION WINDOW IMPLANT | PSD |
JUNCTION WINDOW METAL | E |
OHMIC WINDOW | PSD E |
PACKAGE | Standard FR4 |
Strip Devices (Single Sided) | |