产品中心

PRODUCT CENTER

您的位置: 首页 > 产品中心 > 半导体探测器 > 产品详情

MSX 单面积方硅探测器

产品详情



SILICON DETECTOR TYPE:  SINGLE AREA

DESIGN: Totally depleted ion implanted structures. Micron Semiconductor’s ultra low leakage currents and thin entrance window couples with fast response from total depletion with over voltage capability permits a wide range of applications for these single area detectors. For example, High Energy Physics, Fission Fragments Detection, Room Temperature X-ray Detection, Gamma Transient Detection, Heavy Ion Physics and Nuclear Structure Physics.




DETECTOR DESIGN

MSX03

ACTIVE AREA (mm²)

10.00 x 10.00

CHIP OUTER DIMENSIONS (mm²)

13.00 x 13.00

JUNCTION WINDOW TYPE OPTIONS

2 /7 /9 
  M / T / P

OHMIC WINDOW

2M

PACKAGE

Range of FR4 and ceramic designs