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前置放大器芯片 CR-110-R2

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General Description


Cremat's CR-110-R2 is a single channel charge sensitive preamplifier module intended for use with various types of radiation detectors including semiconductor detectors (e.g. CdTe and CZT), p-i-n photodiodes,avalanche photodiodes (APDs), and various gas-based detectors. 


The CR-110-R2 is one of a series of four charge sensitive preamplifiers offered by Cremat, which differ from each other most notably by their gain. As with all Cremat's preamplifier modules, the CR-110-R2 is small (less than one square inch in area), allowing for compact multichannel detection systems to be constructed using a modular design.








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Package specification


The CR-110-R2 circuit is in an 8-pin SIP package (0.100" spacing). Pin 1 is marked with a white dot for identification.















Input and output waveforms


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Preamplifier Specifications                    

Assume   temp =20 oC, Vs = 6.1V, unloaded output

Preamplification   channels

1

Equivalent   noise charge (ENC)*

ENC   RMS

 

200   electrons

0.03 femtoCoul.

Equivalent noise in   silicon

1.7   keV (FWHM)

Equivalent noise in   CdZnTe

2.4   keV (FWHM)

ENC slope

4   elect. RMS /pF

Gain

1.4   volts / pC

62 mV   / MeV(Si)

Rise time **

7 ns

Decay time constant

140μs

Unsaturated output   swing

-3 to   +3 volts

Maximum charge   detectable per event

1.3   x107 electrons

2.1   pC

Power supply voltage   (Vs)

Maximum

minimum

 

Vs = ±13   volts

Vs = ±6   volts

Power supply current   (pos)

(neg)

7.5   mA

3.5   mA

Power dissipation

70 mW

Operating temperature

-40   to +85 ℃

Output offset

+0.2   to -0.2 volts

Output impedance

50   ohms

*Measured   with input unconnected, using Gaussian shaping amplifier with time constant   =1 μS. With a detector attached to the input, noise from the detector   capacitance, leakage current, and dielectric losses will add to this figure.

** Pulse   rise time (defined as the time to attain 90% of maximum value) has a linear   relationship with input capacitance. Value cited in the table assumes zero   added input capacitance. To calculate pulse rise time for practical   situations, use the equation: tr =0.4 Cd + 7 ns, where tr is the pulse rise   time in ns, and Cd is the added capacitance (e.g. detector capacitance) in   pF. Others factors within the detection system may further limit this value.