SILICON DETECTOR TYPE: SILICON DETECTOR TYPE: SINGLE AND DOUBLE SIDED RING COUNTER DESIGN
DESIGN: Totally depleted ion implanted detector with segmented rings and optional double sided sectors. The S3 features complete rings with signal outputs tracked on the silicon detector using a narrow double metal readout system. The designs exhibiting over voltage capability with excellent radiation damage resistance and annealing capability for high neutron and heavy ion damage.
DESIGN | JUNCTION | OHMIC | ACTIVE AREA | CHIP DIMENSIONS | JUNCTION WINDOW | OHMIC WINDOW | WAFER | PACKAGE | ||||||
ELEMENTS | PITCH | ELEMENTS | PITCH | |||||||||||
Inner | Outer | Inner | Outer | Implant | Metal | Implant | Metal | |||||||
S1 | 64 | 1505 | 16 | 22.5o | 48 00 | 96 00 | 46 00 | 100.00 | 2 | M | 2 | M | 4 | Range of FR4 Designs |
S2 | 48 Incomplete Rings | 491 | 16 | 22.5o | 22 00 | 70 00 | 20 00 | 76.00 | 2 | M | 2 | M | 4 | Standard FR4 |
S2_1500 | 45 Incomplete Rings | 491 | 16 | 22.5o | 26 01 | 70 00 | 20 00 | 76.00 | 2 | M | 2 | M | 6 | Standard FR4 |
S3 | 24 Complete Rings | 886 | 32 | 11.25o | 22 00 | 70 00 | 20 00 | 76.00 | 2 | DM | 2 | M | 4 | Standard FR4 |
S4 | 128 | 2.8125o | 256 | 215 | 10 00 | 130 10 | 15 00 | 124.98 | 2/7/9 | P | 2 | M | 6 | Range of FR4 Designs |
S5 | 24 | Varies | 16 | 22.5o | 22 96 | 70 09 | 20 00 | 76.00 | 2/7/9 | P | 2/7/9 | P | 4 | Standard FR4 |
S7 | 45 Complete Rings | 493 | 16 | 22.5o | 25 92 | 70 09 | 20 00 | 76.00 | 2 | DM | 2 | M | 4 | Standard FR4 |
S1 detector and PCB as viewed from the p- and n-side. S3(DSDM) detector and PCB as viewed from the p- and n-side.
S7 detector assembly